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參數(shù)資料
| 型號： | FDMS3572_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
| 中文描述： | N溝道UltraFET海溝㈢MOSFET的80V的，22A條，16.5mз |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 525K |
| 代理商： | FDMS3572_07 |
F
M
FDMS3572 Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
80
V
I
D
= 250
μ
A, referenced to 25°C
76
mV/°C
V
DS
= 64V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
2
3.2
4
V
I
D
= 250
μ
A, referenced to 25°C
-11
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 8.8A
V
GS
= 6V, I
D
= 8.4A
V
GS
= 10V, I
D
= 8.8A, T
J
= 125°C
V
DS
= 10V, I
D
= 8.8A
13.5
18.3
22.2
23
16.5
24
29
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
1870
275
78
1.3
2490
365
120
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 40V, I
D
= 8.8A
V
GS
= 10V, R
GEN
= 6
11
13
24
12
28
9
8
20
24
39
22
40
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V to 10V V
DD
= 40V
I
D
= 8.8A
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 8.8A (Note 2)
0.8
43
71
1.2
65
107
V
ns
nC
I
F
= 8.8A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
CA
is determined by
the user's board design.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
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