- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDMS3572 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM PDF資料下載
參數(shù)資料
| 型號： | FDMS3572 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM |
| 中文描述： | 8.8 A, 80 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 8 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 526K |
| 代理商： | FDMS3572 |
tm
November 2006
F
M
2006 Fairchild Semiconductor Corporation
FDMS3572 Rev.C
www.fairchildsemi.com
1
FDMS3572
N-Channel UltraFET Trench
MOSFET
80V, 22A, 16.5m
Features
Max r
DS(on)
= 16.5m
at V
GS
= 10V, I
D
= 8.8A
Max r
DS(on)
= 24m
at V
GS
= 6V, I
D
= 8.4A
Typ Qg = 28nC at V
GS
= 10V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
devices combine characteristics that enable
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
80
±20
22
48
8.8
50
78
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
1.6
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking
FDMS3572
Device
FDMS3572
Package
Power 56
Reel Size
7’’
Tape Width
12mm
Quantity
3000 units
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS3672 | N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm |
| FDMS5672 | N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm |
| FDMS8660AS | N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ |
| FDMS8660S | N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM) |
| FDMS8670AS | N-Channel PowerTrench㈢ SyncFET⑩ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS3572_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
| FDMS3600S | 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3602S | 功能描述:MOSFET 25V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3604AS | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3606AS | 功能描述:MOSFET 30V Asymtrc Dual NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。