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參數資料
| 型號： | FDMS8660S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM) |
| 中文描述： | 25 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MLP5X6, 8 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 391K |
| 代理商： | FDMS8660S |
tm
August 2006
F
S
T
2006 Fairchild Semiconductor Corporation
FDMS8660S Rev.C (W)
www.fairchildsemi.com
1
FDMS8660S
N-Channel PowerTrench
SyncFET
TM
30V, 40A, 2.4m
Features
Max r
DS(on)
= 2.4m
at V
GS
= 10V, I
D
= 25A
Max r
DS(on)
= 3.5m
at V
GS
= 4.5V, I
D
= 21A
Advanced Package and Silicon combination for low R
DS(ON)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest
R
DS(ON)
while
maintaining
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
excellent
switching
Application
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
40
147
25
200
83
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
1.5
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
50
Device Marking
FDMS8660S
Device
FDMS8660S
Package
MLP5X6
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
4
3
2
1
5
6
7
8
G
S
S
S
Pin 1
MLP5x6 (Bottom view)
D
D
D
D
相關PDF資料 |
PDF描述 |
|---|---|
| FDMS8670AS | N-Channel PowerTrench㈢ SyncFET⑩ |
| FDMS8670S_07 | N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз |
| FDMS8670S | N-Channel PowerTrench SyncFETTM |
| FDMS8672AS | N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0mヘ |
| FDMS8672S | N-Channel PowerTrench SyncFET 30V, 35A, 5mohm |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS8660S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFETTM |
| FDMS8662 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670 | 功能描述:MOSFET 30V/20V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.0mヘ |
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