參數(shù)資料
型號： FDMS3672
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm
中文描述： 22 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER56, 8 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 259K
代理商： FDMS3672
tm
February 2007
F
M
2007 Fairchild Semiconductor Corporation
FDMS3672 Rev.C
www.fairchildsemi.com
1
FDMS3672
N-Channel UltraFET Trench MOSFET
100V, 22A, 23m
Features
Max r
DS(on)
= 23m
at V
GS
= 10V, I
D
= 7.4A
Max r
DS(on)
= 29m
at V
GS
= 6V, I
D
= 6.6A
Typ Qg = 31nC at V
GS
= 10V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
devices combine characteristics that enable
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
100
±20
22
41
7.4
30
78
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.6
50
°C/W
Device Marking
FDMS3672
Device
FDMS3672
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
G
S
S
S
Pin 1
Power (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS3686S 功能描述:MOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS4435BZ 功能描述:MOSFET P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS5352 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS5672 功能描述:MOSFET 60V N-ChUltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS5672_0712 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET
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