參數(shù)資料
型號： FDMS2734
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm
中文描述： 2.8 A, 250 V, 0.122 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, MO-229, POWER 56, 8 PIN
文件頁數(shù)： 3/7頁
文件大?。?/td> 512K
代理商： FDMS2734
F
M
FDMS2734 Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
5
10
15
20
25
30
V
GS
= 6V
V
GS
= 5V
V
GS
=
4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
5
10
15
20
25
30
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
V
GS
=
10V
Figure 3. Normalized On Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
D
= 2.8A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
4
6
8
10
80
160
240
320
400
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 7A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
0
4
8
12
16
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
20
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