參數(shù)資料
型號: FDMS2572
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel UltraFET Trench MOSFET
中文描述: 27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER56, 8 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 160K
代理商: FDMS2572
FDMS2572 Rev C(W)
www.fairchildsemi.com
Typical Characteristics
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
5.5V
4.5V
V
GS
= 10V
5.0V
6.0V
0.8
1
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
35
40
I
D
, DRAIN CURRENT (A)
r
D
,
D
V
GS
= 4.5V
5.5V
6.5V
10V
5.0V
6.0V
7.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
r
D
,
I
D
= 4.5A
V
GS
= 10V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
I
D
= 2.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
2.5
3
3.5
4
4.5
5
5.5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
M
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