- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375777 > FDMS2572 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel UltraFET Trench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDMS2572 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET |
| 中文描述： | 27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER56, 8 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 160K |
| 代理商： | FDMS2572 |
FDMS2572 Rev C(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Drain-Source Avalanche Current
V
DD
= 75 V, I
D
= 15 A, L=1mH
112
mJ
15
A
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A
150
V
I
D
= 250
μ
A, Referenced to 25
°
C
180
mV/
°
C
V
DS
= 120 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
r
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 4.5 A
V
GS
= 6 V,
I
D
= 4.5 A
V
GS
= 10 V, I
D
= 4.5 A, T
J
= 125
°
C
V
DS
= 10 V,
I
D
=4.5 A
I
D
= 250
μ
A
2
3.0
4
V
–9.8
mV/
°
C
36
39
69
14
47
53
103
m
Ω
S
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
Forward Transconductance
1960
130
pF
pF
C
rss
R
G
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 75 V,
f = 1.0 MHz
V
GS
= 0 V,
30
1.3
pF
Ω
f = 1.0 MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
8
38
31
31
9
7
20
16
61
50
43
ns
ns
ns
ns
nC
nC
nC
V
DD
= 75 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
DS
= 75 V,
V
GS
= 10 V
I
D
= 4.5 A,
Drain–Source Diode Characteristics
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
V
SD
V
GS
= 0 V,
I
S
= 2.2 A
(Note 2)
0.7
1.0
V
67
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 4.5 A,
d
iF
/d
t
= 100 A/μs
130
nC
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design
while R
θ
CA
is determined by the user's board design.
a)
44°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
115 °C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDMS2672 | N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm |
| FDMS2734 | N-Channel UltraFET Trench MOSFET 250V, 14A, 122mohm |
| FDMS3572_07 | N-Channel UltraFET Trench㈢ MOSFET 80V, 22A, 16.5mз |
| FDMS3572 | N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM |
| FDMS3672 | N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 150V 4.5A POWER 56 |
| FDMS2572_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| FDMS2672 | 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS2672_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。