參數(shù)資料
型號(hào)： FDMC8554
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
中文描述： 16.5 A, 20 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER 33, MICROFET-8
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 198K
代理商： FDMC8554
F
M
FDMC8554 Rev.C
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
0
10
20
30
40
50
0
2
4
6
8
10
I
D
= 16.5A
V
DD
= 10V
V
DD
= 5V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
0.1
1
10
100
1000
20
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5000
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
(
A
)
t
AV
, TIME IN AVALANCHE(ms)
40
25
50
T
C
, CASE TEMPERATURE
(
75
100
125
150
0
20
40
60
80
Limited by Package
R
θ
JC
= 3
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
o
C
)
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1s
10s
DC
1ms
10ms
100ms
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
r
DS(on)
LIMITED
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
=135
O
C/W
T
A
= 25
O
C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
300
0.5
V
GS
= 10V
SINGLE PULSE
R
θ
JA
=135
O
C/W
P
(
P
)
,
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
–
相關(guān)PDF資料
PDF描述
FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mohm
FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm
FDMF6700 Driver plus FET Multi-chip Module
FDMF8700 Driver plus FET Multi-chip Module
FDMF8704 High Current / High Frequency FET plus Driver Multi-chip Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMC8588 功能描述:MOSFET Thin gate 25/12V NCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC8588DC 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC86012 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC86102 功能描述:MOSFET 100/20V N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMC86102_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 100 V, 20 A, 24 m??
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*