參數(shù)資料
型號(hào)： FDMC8554
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Power Trench MOSFET 20V, 16.5A, 5mohm
中文描述： 16.5 A, 20 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER 33, MICROFET-8
文件頁(yè)數(shù)： 3/7頁(yè)
文件大小： 198K
代理商： FDMC8554
F
M
FDMC8554 Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0
1
2
3
4
5
0
50
100
150
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
3.5V
V
GS
= 10V
V
GS
=5V
V
GS
= 4V
V
GS
= 4.5V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
50
100
150
200
0
1
2
3
V
GS
=
3.5V
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=4.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
D
= 16.5A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
3
4
5
6
7
8
9
10
0
5
10
15
20
T
J
= 25
o
C
T
J
= 125
o
C
I
D
= 16.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
1
2
3
4
0
25
50
75
100
V
DD
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
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