參數(shù)資料
型號： FDMC6890NZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 4 A, 20 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, MLP3X3, 6 PIN
文件頁數(shù)： 4/11頁
文件大小： 464K
代理商： FDMC6890NZ
F
M
FDMC6890NZ Rev.C
www.fairchildsemi.com
4
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
1.8V
V
GS
= 2.5V
I
D
,
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
2
4
6
8
10
12
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 2.5V
V
GS
= 1.8V
V
GS
=
4.5V
Normalized On-Resistance
Figure 3. Normalized On - Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
D
= 4A
V
GS
= 4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
1.5
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3.0
3.5
4.0
4.5
40
80
120
160
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 4A
r
D
,
S
(
m
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0
0.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
7
8
9
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
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