參數(shù)資料
型號： FDMC3300NZA_07
廠商： Fairchild Semiconductor Corporation
英文描述： Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
中文描述： 單片共漏N溝道㈢為2.5V指定的PowerTrench MOSFET的20V的，8A條，26分ヘ
文件頁數(shù)： 2/6頁
文件大?。?/td> 212K
代理商： FDMC3300NZA_07
F
M
FDMC3300NZA Rev.C
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
20
V
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, referenced to 25°C
12
mV/°
C
V
DS
= 16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
0.6
1.5
V
I
D
= 250
μ
A, referenced to 25°C
-3.1
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 8.0A
V
GS
= 2.5V, I
D
= 7.0A
V
GS
= 4.5V, I
D
= 8.0A, T
J
= 150°C
V
DS
= 5V, I
D
= 8.0A
20
25
26
29
26
34
35
m
Ω
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= 10V, V
GS
= 0V, f = 1MHZ
610
165
115
1.7
815
220
175
pF
pF
pF
Ω
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge at 4.5V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 10V, I
D
= 1.0A
V
GS
= 4.5V, R
GEN
= 6.0
Ω
8
8
16
16
34
18
12
ns
ns
ns
ns
nC
nC
nC
19
9
8
1
2
V
GS
= 0V to 4.5V V
DD
= 10V
I
D
= 8.0A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.0A (Note 2)
0.7
1.2
21
6
V
ns
nC
I
F
= 8.0A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1 in
2
oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
JA
is determined by the
user's board design.
(a)
R
θ
JA
= 60°C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)
R
θ
JA
= 135°C/W when mounted on a minimum pad of 2 oz copper.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
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