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參數(shù)資料
| 型號： | FDMC2674_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| 中文描述： | N溝道UltraFET溝道MOSFET 220，7.0A，三六六米ヘ |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 198K |
| 代理商： | FDMC2674_07 |
F
M
FDMC2674 Rev.F
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
220
V
I
D
= 250
μ
A, referenced to 25°C
248
mV/°
C
V
DS
= 176V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
2
3.4
4
V
I
D
= 250
μ
A, referenced to 25°C
-10.2
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 1.0A
V
GS
= 10V, I
D
= 1.0A , T
J
= 150°C
305
678
366
814
m
Ω
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 100V, V
GS
= 0V,
f = 1MHz
880
70
11
1180
95
20
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge at 10V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 100V, I
D
= 1.0A
V
GS
= 10V, R
GEN
= 2.4
Ω
9
18
23
27
34
18
ns
ns
ns
ns
nC
nC
nC
13
15
21
12.7
3.8
2.9
V
GS
= 0V to 10V V
DD
= 15V
I
D
= 1.0A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
= 2.2A (Note 2)
0.8
1.5
60
109
V
ns
nC
I
F
= 1.0A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1 in
2
oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
JA
is determined by the
user's board design.
(a)
R
θ
JA
= 60°C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)
R
θ
JA
= 135°C/W when mounted on a minimum pad of 2 oz copper.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in
pad of 2 oz copper
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
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