參數(shù)資料
型號(hào)： FDMA520PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Single P-Channel PowerTrench MOSFET -20V, -7.3A, 30mohm
中文描述： 7.3 A, 20 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, 6 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 209K
代理商： FDMA520PZ
F
M
FDMA520PZ Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= –250
μ
A, V
GS
= 0V
–20
V
I
D
= –250
μ
A, referenced to 25°C
–8.4
mV/°
C
V
DS
= –16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
–1
±10
μ
A
μ
A
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250
μ
A
–0.6
–1.1
–1.5
V
I
D
= –250
μ
A, referenced to 25°C
3.5
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= –4.5V, I
D
= –7.3A
V
GS
= –2.5V, I
D
= –5.5A
V
GS
= –4.5V, I
D
= –7.3A ,T
J
= 125°C
V
DS
= –5V, I
D
= –7.3A
26
42
36
22
30
53
55
m
Ω
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= –10V, V
GS
= 0V,
f = 1MHz
1235
255
225
1645
340
340
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= –10V, I
D
= –7.3A
V
GS
= –4.5V, R
GEN
= 6
Ω
10
29
83
74
14
2.9
4.4
20
47
133
119
20
ns
ns
ns
ns
nC
nC
nC
V
DD
= –5V, I
D
= –7.3A
V
GS
= –4.5V
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
–2
–1.2
45
33
A
V
ns
nC
V
GS
= 0V, I
S
= –2A
–0.8
30
22
I
F
=–7.3A, di/dt = 100A/
μ
s
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3:
The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
a. 52°C/W when mounted on
a 1 in
pad of 2 oz copper
b.145°C/W when mounted on a
minimum pad of 2 oz copper
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參數(shù)描述
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FDMA7628 功能描述:MOSFET Snlg PT4, N 20/8V in MLP 2.05x2.05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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