參數(shù)資料
型號(hào): FDMA430NZ_0609
廠商: Fairchild Semiconductor Corporation
英文描述: Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз
中文描述: 單個(gè)N -溝道2.5V的指定的PowerTrench MOSFET的30V的㈢,5.0a中,40mз
文件頁數(shù): 3/7頁
文件大?。?/td> 556K
代理商: FDMA430NZ_0609
F
FDMA430NZ Rev B1
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
10
20
30
40
V
GS
= 1.5V
V
GS
= 2.0V
V
GS
= 2.5V
V
GS
= 3.0V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE(V)
PULSE DURATION=300
μ
S
DUTY CYCLE=2.0% MAX
V
GS
= 4.5V
On Region Characteristics
Figure 2.
5
10
15
20
25
30
35
40
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4.5V
3.5V
3.0V
N
O
I
D
, DRAIN CURRENT(A)
V
GS
= 2.0V
2.5V
On-Resistance vs Drain Current and
Gate Voltage
Figure 3. Normalized
-80
-40
T
J
,JUNCTION TEMPERATURE
(
O
C
)
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 5.0A
V
GS
= 4.5V
On Resistance vs Junction
Temperature
Figure 4.
1
2
3
4
5
0.02
0.03
0.04
0.05
0.06
0.07
0.08
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0% MAX
R
D
,
O
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 2.5A
On-Resistance vs Gate to Source
Votlage
Figure 5.
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
T
J
= 125
o
C
T
J
= 25
o
C
T
J
=
-55
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
= 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0% MAX
Transfer Characteristics
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-4
1E-3
0.01
0.1
1
10
100
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
I
S
,
V
SD
, BODY DIODE FORWAD VOLTAGE(V)
V
GS
=
0V
Source to Drain Diode Forward
Voltage vs Source Current
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