參數(shù)資料
型號(hào): FDMA430NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Single N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2 X 2 MM, ROHS COMPLIANT, MO-229, MICROFET-6
文件頁數(shù): 1/7頁
文件大?。?/td> 559K
代理商: FDMA430NZ
January 2006
F
200
6
Fairchild Semiconductor Corporation
FDMA430NZ Rev B
www.fairchildsemi.com
1
FDMA430NZ
Single N-Channel 2.5V Specified PowerTrench
MOSFET
30V,5.0A,40m
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the R
DS
(on) @V
GS
=2.5V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Features
R
DS(on)
= 40m
@ V
GS
= 4.5 V, I
D
= 5.0A
R
DS(on)
= 50m
@ V
GS
= 2.5 V, I
D
= 4.5A
Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
RoHS Compliant
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
30
±
12
5.0
20
0.9
2.4
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
I
D
A
P
D
Power dissipation (Steady State) (Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
W
T
J
, T
STG
o
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
145
52
o
C/W
Device Marking
430
Device
FDMA430NZ
Reel Size
7”
Tape Width
12mm
Quantity
3000 units
5
1
6
2
3
4
D
D
S
D
D
G
Bottom Drain Contact
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