參數(shù)資料
型號： FDMA430NZ_0609
廠商： Fairchild Semiconductor Corporation
英文描述： Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз
中文描述： 單個N -溝道2.5V的指定的PowerTrench MOSFET的30V的㈢，5.0a中，40mз
文件頁數(shù)： 2/7頁
文件大小： 556K
代理商： FDMA430NZ_0609
F
FDMA430NZ Rev B1
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
B
VDSS
T
J
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
V
GS
= 0V , I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
DS
= 24V, V
GS
= 0V,
V
GS
=
±
12V, V
DS
= 0V
30
V
25.2
mV/°C
1
μ
A
μ
A
±
10
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 4.0V, I
D
= 5.0A
V
GS
= 3.1V, I
D
=4.5A
V
GS
= 2.5V, I
D
=4.5A
V
GS
= 4.5V, I
D
=5.0A,
T
J
=150°C
V
DS
= 5V, I
D
=5.0A
0.6
0.81
1.5
V
-3.2
mV/°C
R
DS(ON)
Static Drain-Source On-Resistance
23.6
23.9
25.4
27.6
40
41
43
50
m
37.0
61
g
FS
Forward Transconductance
25.6
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10V, V
GS
=0V,
f = 1.0MHz
600
110
75
3.5
800
150
115
pF
pF
pF
f = 1.0MHz
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10V, I
D
= 1A
V
GS
= 4.5V, R
GEN
= 6
8.3
7.1
18.1
6.0
7.3
0.8
1.9
17
15
37
12
11
2
3
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10V, I
D
= 5.0A,
V
GS
= 4.5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
2.0
1.2
17
5
A
V
ns
nC
V
GS
= 0V, I
S
= 2.0A
I
F
= 5.0A,
di/dt = 100A/
μ
s
0.69
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
a.
145°C/W when mounted on a minimum pad of 2 oz copper
b.
52°C/W when mounted on a 1 in
pad of 2 oz copper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
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