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參數(shù)資料
| 型號(hào)： | FDMA1023PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm |
| 中文描述： | 3700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, ROHS COMPLIANT, MICROFET-6 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | FDMA1023PZ |
F
M
FDMA1023PZ Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= –250
μ
A, V
GS
= 0V
–20
V
I
D
= –250
μ
A, referenced to 25°C
–11
mV/°
C
V
DS
= –16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
–1
±10
μ
A
μ
A
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250
μ
A
–0.4
–0.7
–1.5
V
I
D
= –250
μ
A, referenced to 25°C
2.5
mV/°C
r
DS(on)
Static Drain to Source On-Resistance
V
GS
= –4.5V, I
D
= –3.7A
V
GS
= –2.5V, I
D
= –3.2A
V
GS
= –1.8V, I
D
= –2.0A
V
GS
= –1.5V, I
D
= –1.0A
V
GS
= –4.5V, I
D
= –3.7A,T
J
=125°C
V
DS
= –5V, I
D
= –3.7A
60
75
100
130
81
12
72
95
130
195
91
m
Ω
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= –10V, V
GS
= 0V,
f = 1MHz
490
100
90
655
135
135
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g(TOT)
Total Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= –10V, I
D
= –1A
V
GS
= –4.5V, R
GEN
= 6
Ω
9
18
22
103
60
12
ns
ns
ns
ns
nC
nC
nC
12
64
37
8.6
0.7
2.0
V
DD
= –10V, I
D
= –3.7A
V
GS
= –4.5V
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
–1.1
–1.2
48
23
A
V
ns
nC
V
GS
= 0V, I
S
= –1.1A (Note 2)
–0.8
32
15
I
F
= –3.7A, di/dt = 100A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA1023PZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1024NZ | 功能描述:MOSFET 20V Dual N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1025P | 功能描述:MOSFET -20V Dual P-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1025P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1027P | 功能描述:MOSFET MLP 2X2 DUAL PCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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