參數(shù)資料
型號(hào): FDM2452NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: CAP CER 2.2UF 50V Y5V 1206
中文描述: 8100 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 2 X 5 MM, MLP-6
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 137K
代理商: FDM2452NZ
FDM2452NZ Rev C1
Typical Characteristics
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
2.5V
2.0V
V
GS
= 4.5V
3.0V
3.5V
1.5V
0.9
1
1.1
1.2
1.3
1.4
1.5
0
5
10
15
20
25
30
35
40
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 8.1A
V
GS
= 4.5V
0.01
0.015
0.02
0.025
0.03
0.035
0.04
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 4.0A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
35
40
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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