參數(shù)資料
型號: FDM2452NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: CAP CER 2.2UF 50V Y5V 1206
中文描述: 8100 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 2 X 5 MM, MLP-6
文件頁數(shù): 1/6頁
文件大?。?/td> 137K
代理商: FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
2005 Fairchild Semiconductor Corporation
FDM2452NZ Rev C1
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
@ V
= 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
Li-Ion Battery Pack
Features
8.1 A, 30 V
R
DS(ON)
= 21 m
@ V
GS
= 4.5 V
R
DS(ON)
= 25 m
@ V
GS
= 2.5 V
ESD protection Diode(note 3)
Low Profile – 0.8 mm maximum – in the new
package MicroFET 2 x 5 mm
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
12
8.1
30
2.2
0.8
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
55
145
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2452Z
FDM2452NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
PIN 1
G2
S2
S2
G1
S1
S1
S1 S1 G1
S2 S2 G2
MLP 2x5
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