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參數(shù)資料
| 型號(hào)： | FDM2509NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 8700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 5 MM, MLP-6 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | FDM2509NZ |
February 2006
FDM2509NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
2006 Fairchild Semiconductor Corporation
FDM2509NZ Rev C2
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
Li-Ion Battery Pack
Features
8.7 A, 20 V
R
DS(ON)
= 18 m
@ V
GS
= 4.5 V
R
DS(ON)
= 24 m
@ V
GS
= 2.5 V
ESD protection diode (note 3)
Low Profile – 0.8mm maximum – in the new package
MicroFET 2x5 mm
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
20
±
12
8.7
30
2.2
0.8
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation (Steady State)
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature
Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R
θ
JC
Thermal Resistance, Junction-to-Case (Drain)
55
2
°
C/W
Package Marking and Ordering Information
Device Marking
Device
2509Z
FDM2509NZ
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
F
PIN 1
G2
S2
S2
G1
S1
S1
S1 S1 G1
S2 S2 G2
MLP 2x5
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