參數(shù)資料
型號(hào): FDI8442
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET
中文描述: 23 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 316K
代理商: FDI8442
F
FDI8442 Rev
. A
www.fairchildsemi.com
5
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C
apability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
1
10
100
0.1
1
10
100
1000
D
,
LIMITED
BY PACKAGE
10us
100us
1ms
10ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25o
C
DC
4000
0.01
0.1
1
10
100
1000
1
10
100
500
5000
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
2.0
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.0
3.5
4.0
4.5
5.0
0
40
80
120
160
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
0
1
2
3
4
5
0
40
80
120
160
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
4
5
6
7
8
9
10
0
10
20
30
40
50
r
D
,
O
(
m
Ω
)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
N
I
D
= 80A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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