參數(shù)資料
型號(hào): FDI8442
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET
中文描述: 23 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/7頁
文件大小: 316K
代理商: FDI8442
F
FDI8442 Rev
. A
www.fairchildsemi.com
4
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P
T
C
, CASE TEMPERATURE
(
o
C
)
25
50
75
100
125
150
175
0
50
100
150
200
250
300
T
C
, CASE TEMPERATURE
(
o
C
)
I
D
,
V
GS
= 10V
CURRENT LIMITED
BY PACKAGE
10
-5
10
-4
10
t, RECTANGULAR PULSE DURATION(s)
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
N
I
θ
J
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
10
-5
10
-4
10
t, RECTANGULAR PULSE DURATION(s)
-3
10
-2
10
-1
10
0
10
1
10
100
1000
10000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
SINGLE PULSE
I
D
,
P
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
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