參數(shù)資料
型號(hào)： FDJ127P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel -1.8 Vgs Specified PowerTrench MOSFET
中文描述： 4.1 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SC-75, 6 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 172K
代理商： FDJ127P
July 2004
2004 Fairchild Semiconductor Corporation
FDJ127P Rev B2 (W)
FDJ127P
P-Channel -1.8 Vgs Specified PowerTrench
MOSFET
General Description
This P-Channel -1.8V specified MOSFET uses
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
Applications
Battery management
Load switch
Features
–4.1 A, –20 V.
R
DS(ON)
= 60 m
@ V
GS
= –4.5 V
R
DS(ON)
= 85 m
@ V
GS
= –2.5 V
R
DS(ON)
= 133 m
@ V
GS
= –1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC75-6 surface mount
package
S
S
S
S
S
G
SC75-6 FLMP
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
–20
±
8
–4.1
–16
1.6
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1)
– Pulsed
(Note 1)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
.C
FDJ127P
Note 1)
77
°
C/W
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDJ128N_F077 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ129 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET
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FDJ129P_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET
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