參數(shù)資料
型號： FDJ1028N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:12V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:72ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
中文描述： 3.2 A, 20 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SC-75, 6 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 539K
代理商： FDJ1028N
2005 Fairchild Semiconductor Corporation
FDJ1028N Rev. B2 (W)
1
www.fairchildsemi.com
February 2005
F
FDJ1028N
N-Channel 2.5 Vgs Specified PowerTrench
MOSFET
Features
■
3.2 A, 20 V.
R
R
DS(ON)
DS(ON)
= 90 m
= 130 m
@ V
@ V
GS
GS
= 4.5 V
= 2.5 V
■
Low gate charge
High performance trench technology for extremely low
R
DS(ON)
FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
■
■
Applications
■
Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the R
DS(ON)
and thermal properties of the device are
optimized for battery power management applications.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Packge Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage
±
12
V
I
D
Drain Current
– Continuous
(Note 1a)
3.2
A
– Pulsed
12
P
D
Power Dissipation for single Operation
(Note 1a)
1.5
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
80
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
5
Device Marking
Device
Reel Size
Tape width
Quantity
.F
FDJ1028N
7"
8mm
3000 units
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
S1S2G2
G1
S1
S2
相關(guān)PDF資料
PDF描述
FDJ1032C Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET
FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET
FDJ129 P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDJ1028N_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 2.5 Vgs Specified PowerTrench MOSFET
FDJ1032C 功能描述:MOSFET SC75 FLMP COMPLEMENTARY POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ1032C_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDJ127P 功能描述:MOSFET P-Ch -1.8 Vgs Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N 功能描述:MOSFET N-Ch PowerTrench 2.5Vgs Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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