參數(shù)資料
型號(hào)： FDJ1032C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes
中文描述： 3.2 A, 20 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： FLMP, SC-75, 6 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 650K
代理商： FDJ1032C
2005 Fairchild Semiconductor Corporation
FDJ1032C Rev. B1(W)
1
www.fairchildsemi.com
February 2005
F
FDJ1032C
Complementary PowerTrench
MOSFET
Features
■
Q1
Q2
–2.8 A, –20 V.
R
R
R
R
R
DS(ON)
DS(ON)
DS(ON)
= 160 m
= 230 m
= 390 m
= 90 m
= 130 m
@ V
@ V
@ V
@ V
@ V
GS
GS
GS
= –4.5 V
= –2.5 V
= –1.8 V
= 4.5 V
= 2.5 V
■
3.2 A, 20 V.
DS(ON)
DS(ON)
GS
GS
■
Low gate charge
High performance trench technology for extremely low
R
DS(ON)
FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
■
■
Applications
■
DC/DC converter
Load switch
Motor Driving
■
■
General Description
These N & P-Channel MOSFETs are produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet main-
tain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
–20
Q2
20
Units
V
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
±
8
±
12
V
I
D
Drain Current
– Continuous
(Note 1a)
–2.8
3.2
A
– Pulsed
–12
12
P
D
Power Dissipation for Single Operation
(Note 1a)
1.5
W
(Note 1b)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
80
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
5
3
2
1
4
5
6
Q1 (P)
Bottom Drain Contact
Bottom Drain Contact
Q2 (N)
S1S2G2
G1
S1
S2
相關(guān)PDF資料
PDF描述
FDJ127P P-Channel -1.8 Vgs Specified PowerTrench MOSFET
FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET
FDJ129 P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDLL300A High Conductance Low Leakage Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDJ1032C_08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDJ127P 功能描述:MOSFET P-Ch -1.8 Vgs Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N 功能描述:MOSFET N-Ch PowerTrench 2.5Vgs Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N_F077 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ129 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET
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