參數(shù)資料
型號： FDI8442
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET
中文描述： 23 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 3/7頁
文件大小： 316K
代理商： FDI8442
F
FDI8442 Rev
. A
www.fairchildsemi.com
3
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
V
DD
= 20V, I
D
= 80A
V
GS
= 10V, R
GS
= 2
Ω
-
-
-
-
-
-
-
62
-
-
-
-
118
ns
ns
ns
ns
ns
ns
19.5
19.3
57
17.2
-
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
I
SD
= 40A
I
F
= 75A, di/dt = 100A/
μ
s
I
F
= 75A, di/dt = 100A/
μ
s
-
-
-
-
0.9
0.8
49
70
1.25
1.0
64
91
V
V
ns
nC
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1:
Starting T
= 25
o
C, L = 0.35mH, I
AS
= 64A
2:
Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
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