參數(shù)資料
型號: FDI3632
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 100V, 80A, 9mз
中文描述: 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
封裝: TO-262AB, 3 PIN
文件頁數(shù): 3/11頁
文件大?。?/td> 267K
代理商: FDI3632
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
F
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
125
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
CURRENT LIMITED
BY PACKAGE
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.2
0.1
0.05
0.02
0.01
0.5
SINGLE PULSE
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
50
2000
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
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