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參數(shù)資料
| 型號(hào)： | FDI3632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 80A, 9mз |
| 中文描述： | 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB |
| 封裝： | TO-262AB, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 267K |
| 代理商： | FDI3632 |
2003 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 Rev. B1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 0.12mH, I
AS
= 75A.
2:
Pulse Width = 100s
Device Marking
FDB3632
FDP3632
FDI3632
Device
FDB3632
FDP3632
FDI3632
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
=80A, V
GS
=10V
I
D
=40A, V
GS
= 6V,
I
D
=80A, V
GS
=10V, T
C
=175
o
C
2
-
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0075
0.009
0.018
0.009
0.015
0.022
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
6000
820
200
84
11
30
20
20
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 80A
I
g
= 1.0mA
110
14
-
-
-
V
DD
= 50V, I
D
= 80A
V
GS
= 10V, R
GS
= 3.6
-
-
-
-
-
-
-
102
-
-
-
-
213
ns
ns
ns
ns
ns
ns
30
39
96
46
-
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt= 100A/
μ
s
I
SD
= 75A, dI
SD
/dt= 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
64
120
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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