參數(shù)資料
型號(hào): FDG6332C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel
中文描述: 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-70, 6 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 93K
代理商: FDG6332C
FDG6332C Rev C2 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Q1
Q2
0.25
–0.25
1.2
–1.2
A
V
SD
Q1
Q2
V
GS
= 0 V, I
S
= 0.25 A
V
GS
= 0 V, I
S
= –0.25 A
(Note 2)
0.74
–0.77
Drain–Source Diode Forward
Voltage
(Note 2)
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design. R
θ
JA
= 415°C/W when mounted on a minimum pad of FR-4
PCB in a still air environment.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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