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參數(shù)資料
| 型號(hào)： | FDG6332C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel |
| 中文描述： | 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 93K |
| 代理商： | FDG6332C |
September 2003
2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)
FDG6332C
20V N & P-Channel PowerTrench
MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
Features
Q1
0.7 A, 20V.
R
DS(ON)
= 300 m
@ V
GS
= 4.5 V
R
DS(ON)
= 400 m
@ V
GS
= 2.5 V
Q2
–0.6 A, –20V.
R
DS(ON)
= 420 m
@ V
GS
= –4.5 V
R
DS(ON)
= 630 m
@ V
GS
= –2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
D
G
S
Pin 1
SC70-6
Complementary
6
5
4
3
2
1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Q1
20
±
12
0.7
2.1
Q2
–20
±
12
–0.6
–2
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
(Note 1)
P
D
T
J
, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1)
0.3
W
°
C
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
.32
FDG6332C
(Note 1)
415
°
C/W
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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PDF描述 |
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| FDG6335N | Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Case Size: 3.2x6.0 mm; Packaging: Tape & Reel |
| FDG6342L | Integrated Load Switch |
| FDG8842CZ | Complementary PowerTrench㈢ MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6332C"F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N AND P CH 20V 0.18OHM 700mA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N AND P CH, 20V, 0.18OHM, 700mA, |
| FDG6332C_F085 | 功能描述:MOSFET 20V N&P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6332C_G | 制造商:Fairchild Semiconductor Corporation 功能描述:LOW POWER MOSFET |
| FDG6332C-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDG6332C Series 20 V 300 mOhm N & P-Channel PowerTrench Mosfet SC70-6 |
| FDG6335N | 功能描述:MOSFET FDG6335N RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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