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參數(shù)資料
| 型號： | FDD6632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
| 中文描述： | 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 241K |
| 代理商： | FDD6632 |
2002 Fairchild Semiconductor Corporation
FDD6632
Rev. B
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 9A, V
GS
= 10V
I
D
= 6A, V
GS
= 4.5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.058
0.090
0.090
0.110
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
255
73
23
2.6
0.3
0.8
0.8
-
-
-
pF
pF
pF
nC
nC
nC
nC
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 9A
I
g
= 1.0mA
4.0
0.5
-
-
V
DD
= 15V, I
D
= 6A
V
GS
= 4.5V, R
GS
= 47
-
-
-
-
-
-
-
77
-
-
-
-
50
ns
ns
ns
ns
ns
ns
10
41
10
23
-
V
DD
= 15V, I
D
= 6A
V
GS
= 10V, R
GS
= 47
-
-
-
-
-
-
-
4
2
9
-
-
-
-
ns
ns
ns
ns
ns
ns
33
20
-
80
I
D
= 2.3A, L = 3.0mH
153
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 9A
I
SD
= 5A
I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
18
8
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
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