- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375772 > FDD6637 (FAIRCHILD SEMICONDUCTOR CORP) 35V P-Channel PowerTrench-R MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDD6637 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 35V P-Channel PowerTrench-R MOSFET |
| 中文描述： | 13 A, 35 V, 0.0116 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 115K |
| 代理商： | FDD6637 |
FDD6637
35V P-Channel PowerTrench
MOSFET
October 2005
2005 Fairchild Semiconductor Corporation
FDD6637 Rev C(W)
www.fairchildsemi.com
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
Inverter
Power Supplies
Features
–55 A, –35 V R
DS(ON)
= 11.6 m
Ω
@ V
GS
= –10 V
R
DS(ON)
= 18 m
Ω
@ V
GS
= –4.5 V
High performance trench technology for extremely
low R
DS(ON)
RoHS Compliant
G
S
D
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
DS(Avalanche)
Drain-Source Avalanche Voltage (maximum)
(Note 4)
V
GSS
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
(Note 3)
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD6637
FDD6637
Ratings
–35
–40
±
25
–55
–14
–100
57
3.8
1.6
–55 to +150
Units
V
V
V
A
@T
A
=25°C
(Note 1a)
Pulsed
@T
C
=25°C
(Note 3)
@T
A
=25°C
@T
A
=25°C
I
D
(Note 1a)
(Note 1a)
(Note 1b)
P
D
W
°
C
(Note 1)
2.2
40
96
(Note 1a)
(Note 1b)
°
C/W
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD6670S | 20 AMP MINIATURE POWER RELAY |
| FDD6670 | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AL | 30V N-Channel PowerTrench MOSFET |
| FDD6670A | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AS | 30V N-Channel PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
| FDD6637_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -35V, -21A, 18m?? |
| FDD6637_F085 | 功能描述:MOSFET Trans MOS P-Ch 35V 13A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6644 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。