參數(shù)資料
型號(hào): FDD6635
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 35V N-Channel PowerTrench MOSFET
中文描述: 15 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT, DPAK-3
文件頁數(shù): 1/8頁
文件大?。?/td> 151K
代理商: FDD6635
FDD6635
35V N-Channel PowerTrench
MOSFET
September 2005
2005 Fairchild Semiconductor Corporation
FDD6635 Rev. C(W)
www.fairchildsemi.com
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
Inverter
Power Supplies
Features
59 A, 35 V
R
DS(ON)
= 10 m
Ω
@ V
GS
= 10 V
R
DS(ON)
= 13 m
Ω
@ V
GS
= 4.5 V
Fast Switching
RoHS compliant
G
S
D
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
DS(Avalanche)
Drain-Source Avalanche Voltage (maximum)
(Note 4)
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD6635
FDD6635
Ratings
35
40
±
20
59
15
100
55
3.8
1.6
–55 to +150
Units
V
V
V
A
W
(Note 3)
@T
A
=25°C
(Note 1a)
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
P
D
°
C
(Note 1)
2.7
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
M
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