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參數(shù)資料
| 型號： | FDD6632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз |
| 中文描述： | 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 241K |
| 代理商： | FDD6632 |
2002 Fairchild Semiconductor Corporation
June 2002
FDD6632
Rev. B
F
FDD6632
N-Channel Logic Level UltraFET
Trench Power MOSFET
30V, 9A, 90m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Formerly developmental type 83317
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.058
(Typ), V
GS
= 10V, I
D
= 9A
r
DS(ON)
= 0.090
(Typ), V
GS
= 4.5V, I
D
= 6A
Q
g(TOT)
(Typ) = 2.6nC, V
GS
= 5V
Q
gd
(Typ) = 0.8nC
C
ISS
(Typ) = 255pF
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
9
6
4
A
A
A
A
W
Figure 4
15
0.1
-55 to 175
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
10
100
52
o
C/W
o
C/W
o
C/W
Device Marking
FDD6632
Device
FDD6632
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
D
G
S
G
S
D
D-PAK
(TO-252)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6632_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз |
| FDD6635 | 功能描述:MOSFET 35V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 功能描述:MOSFET 35V PCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6637 | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252 |
| FDD6637_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET |
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