參數(shù)資料
型號: FDD3672
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
中文描述: 6.5 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數(shù): 6/11頁
文件大小: 233K
代理商: FDD3672
2002 Fairchild Semiconductor Corporation
FDD3672 Rev. A
F
Test Circuits and Waveforms
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
L
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gs
Q
gd
Q
gs2
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD3672_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ
FDD3672_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ
FDD3672_F085 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD3672_Q 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD3672-CUT TAPE 制造商:FAIRCHILD 功能描述:FDD3672 Series 100 V 28 mOhm N-Channel UltraFET Trench Mosfet TO-252AB