- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375771 > FDD3682 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET 100V, 32A, 36mз PDF資料下載
參數(shù)資料
| 型號(hào)： | FDD3682 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
| 中文描述： | 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | FDD3682 |
2002 Fairchild Semiconductor Corporation
September 2002
FDD3682 Rev. B
F
FDD3682
N-Channel PowerTrench
MOSFET
100V, 32A, 36m
Features
r
DS(ON)
= 32m
(Typ.), V
GS
= 10V, I
D
= 32A
Q
g
(tot) = 18.5nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82755
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection System
42V Automotive Load Control
Electronic Valve Train System
MOSFET Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
32
23
5.5
A
A
A
A
Figure 4
55
95
0.63
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.58
100
52
o
C/W
o
C/W
o
C/W
D
G
S
TO-252AA
FDD SERIES
GATE
SOURCE
(FLANGE)
DRAIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD3690 | DIODE ZENER SINGLE 1000mW 6.8Vz 37mA-Izt 0.05 10uA-Ir 4Vr DO41-GLASS 5K/REEL |
| FDD3N40 | 400V N-Channel MOSFET |
| FDD3N40TF | 400V N-Channel MOSFET |
| FDD3N40TM | 400V N-Channel MOSFET |
| FDD4141 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.5 to 3.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD TO-252AA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, SMD, TO-252AA |
| FDD3682_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 32A, 36m?? |
| FDD3682_F085 | 功能描述:MOSFET N-Channel PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3690 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。