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參數(shù)資料
| 型號： | FDD3690 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | DIODE ZENER SINGLE 1000mW 6.8Vz 37mA-Izt 0.05 10uA-Ir 4Vr DO41-GLASS 5K/REEL |
| 中文描述： | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 84K |
| 代理商： | FDD3690 |
April 2001
FDD3690
100V N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corp.
FDD3690 Rev C(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
22 A, 100 V.
R
DS(ON)
= 64 m
@ V
GS
= 10 V
R
DS(ON)
= 71 m
@ V
GS
= 6 V
Low gate charge (28nC typical)
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
G
S
D
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
100
±
20
22
75
60
3.8
1.6
–55 to +175
Units
V
V
A
W
(Note 3)
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
P
D
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD3690
FDD3690
(Note 1)
2.5
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDD3706 | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3860 | 功能描述:MOSFET 100V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3860_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDD3860_G | 制造商:Fairchild Semiconductor Corporation 功能描述:100V N-Channel PowerTrenchR MOSFET |
| FDD390N15A | 功能描述:MOSFET PT5 100/20V NCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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