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參數(shù)資料
| 型號： | FDD3580 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 80V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.7 A, 80 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 120K |
| 代理商： | FDD3580 |
FDD3580/FDU3580 Rev. A1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source
Avalanche Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 40 V,
I
D
= 7.7 A
245
mJ
7.7
A
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
80
V
Breakdown Voltage Temperature
79
mV/
°
C
V
DS
= 64 V,
V
GS
= 20 V,
V
GS
= –20 V, V
DS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
2
2.5
7
4
V
mV/
°
C
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V,
V
GS
= 10 V,
V
DS
= 10 V,
I
D
= 7.7 A
I
D
= 7.2 A
I
D
= 7.7 A,T
J
=125
°
C
V
DS
= 10 V
I
D
= 7.7 A
23
24
37
29
33
50
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
30
A
S
28
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1760
144
72
pF
pF
pF
V
DS
= 40 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
13
8
34
16
35
6.2
8.6
23
16
54
29
49
ns
ns
ns
ns
nC
nC
nC
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 40V,
V
GS
= 10 V,
I
D
= 7.7 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
3.2
1.2
A
V
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
0.73
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40 °C/W when mounted on a
1in
2
pad of 2 oz copper.
Scale 1 : 1 on letter size paper
b) R
θ
JA
= 96 °C/W when mounted
on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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