- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375771 > FDD3570 (FAIRCHILD SEMICONDUCTOR CORP) 80V N-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDD3570 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 80V N-Channel PowerTrench MOSFET |
| 中文描述： | 43 A, 80 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | FDD3570 |
FDD3570 Rev. A(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted16
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
80
V
78
mV/
°
C
V
DS
= 64 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
100
I
GSSR
V
GS
= –20 V
V
DS
= 0 V
–100
nA
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
2
2.4
-7
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A,T
J
=125
°
C
V
GS
= 6 V, I
D
= 9 A
V
GS
= 10 V,
V
DS
= 5 V,
0.015
0.027
0.016
0.019
0.038
0.022
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 14 A
25
A
S
40
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2800
230
117
pF
pF
pF
V
DS
= 40 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
20
12
60
24
54
9.6
14
32
24
95
38
76
ns
ns
ns
ns
nC
nC
nC
V
DD
= 40 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 40V,
V
GS
= 10 V
I
D
= 9 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.8
1.2
A
V
V
GS
= 0 V,
I
S
= 2.8 A
(Note 2)
0.72
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40°/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96°/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD3580 | 80V N-Channel PowerTrench MOSFET |
| FDD3670 | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO |
| FDD3672 | N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз |
| FDD3680 | FAST SWITCHING DIODE_1N4148_SOD-323__ |
| FDD3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD3570_0011 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
| FDD3580 | 功能描述:MOSFET 80V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3670 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3670_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDD3672 | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。