參數(shù)資料
型號(hào)： FDD2670
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： XTAL MTL T/H HC49/US
中文描述： 3.6 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 95K
代理商： FDD2670
FDD2670 Rev C1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 100 V,
I
D
= 3.6 A
375
mJ
3.6
A
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
200
V
Breakdown Voltage Temperature
214
mV/
°
C
V
DS
= 160 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
NA
NA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
I
D(on)
On–State Drain Current
g
FS
Forward Transconductance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
4
4.5
V
Gate Threshold Voltage
-10
mV/
°
C
V
GS
= 10 V,
V
GS
= 10 V, I
D
= 3.6 A T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 3.6 A
100
205
130
275
m
V
DS
= 5 V
I
D
= 3.6 A
20
A
S
15
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1228
112
17
PF
PF
pF
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
13
8
30
25
27
7
10
23
16
48
40
43
ns
ns
ns
ns
nC
nC
nC
V
DD
= 100 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 3.6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.1
A
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
JA
= 40oC/W when
mounted on a 1in2 pad of
2oz copper.
b) R
JA
= 96oC/W on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
I
SD
≤
3A, di/dt
≤
100A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
F
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