參數(shù)資料
型號： FDD2582
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 150V, 21A, 66m
中文描述： 3.7 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 3 PIN
文件頁數(shù)： 2/11頁
文件大?。?/td> 268K
代理商： FDD2582
2002 Fairchild Semiconductor Corporation
FDD2582 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 1.17 mH, I
AS
= 10A.
Device Marking
FDD2582
Device
FDD2582
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 120V
V
GS
= 0V
V
GS
=
±
20V
150
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 7A, V
GS
= 10V
I
D
= 4A, V
GS
= 6V,
I
D
= 7A, V
GS
= 10V,
T
C
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.058
0.066
0.066
0.099
-
0.151
0.172
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1295
145
30
19
2.4
6.2
3.8
4.2
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 75V
I
D
= 7A
I
g
= 1.0mA
25
3.2
-
-
-
V
DD
= 75V, I
D
= 7A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
-
8
19
32
19
-
41
-
-
-
-
77
ns
ns
ns
ns
ns
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 7A
I
SD
= 4A
I
SD
= 7A, dI
SD
/dt = 100A/
μ
s
I
SD
= 7A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
67
134
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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