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參數(shù)資料
| 型號： | FDD2570 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 4.7 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | FDD2570 |
FDD2570 Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 75 V,
I
D
= 4.7 A
375
mJ
4.7
A
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
150
V
Breakdown Voltage Temperature
150
mV/
°
C
V
DS
= 120 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
2.6
–7
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 4.7 A, T
J =
125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
I
D
= 4.7 A
I
D
= 4.5 A
60
63
120
80
90
158
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 6.3 A
30
A
S
20
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1907
117
33
pF
pF
pF
V
DS
= 75 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
12
7
41
21
39
7
9
19
14
65
34
62
ns
ns
ns
ns
nC
nC
nC
V
DD
= 75 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 75 V,
V
GS
= 10 V
I
D
= 4.7 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.7
A
V
SD
V
GS
= 0 V,
I
S
= 2.7 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40oC/W when
mounted on a 1in2 pad of
2oz copper.
b) R
θ
JA
= 96oC/W on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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