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參數(shù)資料
| 型號： | FDC655AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 528K |
| 代理商： | FDC655AN |
2
www.fairchildsemi.com
FDC655BN Rev. C(W)
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1.
R
guaranteed by design while R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
CA
is determined by the user's board design.
78°C/W when mounted on a 1in
pad of 2oz copper on FR-4 board.
θ
JC
is
a.
2
b.
156°C/W when mounted on a minimum pad.
≤
300
2.
Pulse Test: Pulse Width
μ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 250
= 0 V, I
D
= 250
μ
A
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
μ
A, Referenced to 25
°
C
23
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
V
DS
DS
= 24 V, V
= 24 V, V
GS
GS
= 0 V
= 0 V, T
J
= -55
°
C
1
10
μ
A
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 250
= V
GS
μ
, I
D
= 250
μ
A
1
1.9
3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
A, Referenced to 25
°
C
– 4.1
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 10 V, I
D
D
D
= 6.3 A
= 5.5 A
= 6.3 A, T
J
=125
°
C
20
26
27
25
33
45
m
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 6.3 A
20
S
Dynamic Characteristics
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
570
pF
C
oss
Output Capacitance
140
pF
C
rss
Reverse Transfer Capacitance
70
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
2.1
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 10 V, R
D
= 1 A,
GEN
= 6
8
16
ns
t
r
Turn–On Rise Time
4
8
ns
t
d(off)
Turn–Off Delay Time
22
35
ns
t
f
Turn–Off Fall Time
3
6
ns
Q
g(TOT)
Total Gate Charge at Vgs=10V
V
DD
= 15 V, I
D
= 6.3 A,
10
15
nC
Q
g(TOT)
Total Gate Charge at Vgs=5V
6
8
nC
Q
gs
Gate–Source Charge
1.7
nC
Q
gd
Gate–Drain Charge
2.1
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
V
SD
Drain–Source Diode Forward Voltage V
GS
= 6.3 A, d
= 0 V, I
S
= 1.3 A (Note 2)
0.8
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
IF
/d
t
= 100 A/
μ
s
18
ns
Q
rr
Diode Reverse Recovery Charge
9
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC655AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC655AN_F095 | 功能描述:MOSFET 30V 6.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC655BN | 功能描述:MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC655BN | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V 6.3mA |
| FDC655BN_F123 | 功能描述:MOSFET 30V N-CHAN 0.025Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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