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參數資料
| 型號： | FDC655AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 528K |
| 代理商： | FDC655AN |
2005 Fairchild Semiconductor Corporation
FDC655BN Rev. C(W)
1
www.fairchildsemi.com
April 2005
F
FDC655BN
Single N-Channel, Logic Level, PowerTrench
MOSFET
Features
■
6.3 A, 30 V.
R
DS(ON)
R
DS(ON)
Fast switching
Low gate charge
High performance trench technology for extremely low Rdson
= 25 m
= 33 m
@ V
@ V
GS
GS
= 10 V
= 4.5 V
■
■
■
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimized on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current
– Continuous
(Note 1a)
6.3
A
– Pulsed
20
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range
– 55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
.55B
FDC655BN
7’’
8mm
3000 units
1
2
3
6
5
4
D
D
SuperSOT-6
TM
D
G
D
55B
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC655AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC655AN_F095 | 功能描述:MOSFET 30V 6.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC655BN | 功能描述:MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC655BN | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V 6.3mA |
| FDC655BN_F123 | 功能描述:MOSFET 30V N-CHAN 0.025Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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