參數(shù)資料
型號(hào)： FDC655AN
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Single N-Channel, Logic Level, PowerTrenchTM MOSFET
中文描述： 6300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 528K
代理商： FDC655AN
2005 Fairchild Semiconductor Corporation
FDC655BN Rev. C(W)
1
www.fairchildsemi.com
April 2005
F
FDC655BN
Single N-Channel, Logic Level, PowerTrench
MOSFET
Features
■
6.3 A, 30 V.
R
DS(ON)
R
DS(ON)
Fast switching
Low gate charge
High performance trench technology for extremely low Rdson
= 25 m
= 33 m
@ V
@ V
GS
GS
= 10 V
= 4.5 V
■
■
■
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimized on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current
– Continuous
(Note 1a)
6.3
A
– Pulsed
20
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range
– 55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
.55B
FDC655BN
7’’
8mm
3000 units
1
2
3
6
5
4
D
D
SuperSOT-6
TM
D
G
D
55B
S
相關(guān)PDF資料
PDF描述
FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET
FDC6561 Dual N-Channel Logic Level PowerTrenchTM MOSFET
FDC658AP Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm
FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
FDC6901L Integrated Load Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC655AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6
FDC655AN_F095 功能描述:MOSFET 30V 6.3A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC655BN 功能描述:MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC655BN 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V 6.3mA
FDC655BN_F123 功能描述:MOSFET 30V N-CHAN 0.025Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*