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參數資料
| 型號： | FDC6420 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 20V N & P-Channel PowerTrench MOSFETs |
| 中文描述： | 20V的? |
| 文件頁數： | 6/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | FDC6420 |
FDC6420C Rev C(W)
Typical Characteristics: P-Channel
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-3.0V
-2.5V
-2.0V
-1.8V
V
GS
=- 4.5V
-3.5V
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
0
1
2
3
4
5
6
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -2.0V
-3.5V
-3.0V
-4.5V
-2.5V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.2A
V
GS
= -4.5V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.1 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
125
o
C
V
DS
= -5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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PDF描述 |
|---|---|
| FDC6420C | 20V N & P-Channel PowerTrench MOSFETs |
| FDC642 | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC642P | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC6432SH | 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
| FDC645 | N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6420C | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6420C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDC6420C_Q | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC642P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC642P_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m?? |
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