參數(shù)資料
型號: FDC6420
廠商: Fairchild Semiconductor Corporation
英文描述: 20V N & P-Channel PowerTrench MOSFETs
中文描述: 20V的?
文件頁數(shù): 5/8頁
文件大?。?/td> 102K
代理商: FDC6420
FDC6420C Rev C(W)
Typical Characteristics
0
1
2
3
4
5
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 3A
V
DS
= 5V
10V
15V
0
90
180
270
360
450
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
10ms
1ms
0
1
2
3
4
5
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 180°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
F
相關PDF資料
PDF描述
FDC6420C 20V N & P-Channel PowerTrench MOSFETs
FDC642 P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC642P P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
FDC645 N-Channel PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDC6420C 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6420C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6420C_Q 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC642P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC642P_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m??