參數(shù)資料
型號： FDC6420
廠商： Fairchild Semiconductor Corporation
英文描述： 20V N & P-Channel PowerTrench MOSFETs
中文描述： 20V的?
文件頁數(shù)： 2/8頁
文件大?。?/td> 102K
代理商： FDC6420
FDC6420C Rev C(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= 250
μ
A, Ref. to 25
°
C
I
D
= –250
μ
A, Ref. to 25
°
C
V
DS
= 16 V,
V
DS
= –16 V, V
GS
= 0 V
V
GS
= 12 V,
V
GS
= 12 V,
V
GS
= –12 V, V
DS
= 0 V
V
GS
= –12 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
13
–11
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V
1
–1
100
100
–100
–100
μ
A
I
GSSF
Gate–Body Leakage, Forward
V
DS
= 0 V
V
DS
= 0 V
nA
I
GSSR
Gate–Body Leakage, Reverse
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
Q1
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= 250
μ
A, Ref. To 25
°
C
I
D
= –250
μ
A, Ref. to 25
°
C
V
GS
= 4.5 V, I
D
= 3.0 A
V
GS
= 2.5 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 3.0 A,T
J
=125
°
C
V
GS
= –4.5 V, I
D
= –2.2 A
V
GS
=– 2.5 V, I
D
= –1.8 A
V
GS
= – 4.5 V,I
D
=–2.2 A,T
J
=125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= 5 V
I
D
= 2.5 A
V
DS
= –5 V
I
D
= –2.0A
0.5
0.9
1.5
Q2
–0.6
–1.0
–1.5
V
V
GS(th)
T
J
Q1
–3
Gate Threshold Voltage
Temperature Coefficient
Q2
Q1
–3
50
66
71
100
145
137
mV/
°
C
R
DS(on)
70
95
106
125
190
184
Static Drain–Source
On–Resistance
Q2
m
I
D(on)
Q1
Q2
Q1
Q2
12
–6
On–State Drain Current
A
g
FS
10
6
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
V
DS
=10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=10 V, V
GS
= 0 V, f=1.0MHz
V
DS
=–10 V, V
GS
= 0 V, f=1.0MHz
324
337
82
88
42
51
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
pF
Switching Characteristics
t
d(on)
Turn–On Delay Time
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
5
9
7
12
13
10
1.6
5
3.3
3.7
0.95
0.68
0.7
1.3
10
18
14
22
23
20
3
10
4.6
ns
t
r
Turn–On Rise Time
ns
t
d(off)
Turn–Off Delay Time
ns
t
f
Turn–Off Fall Time
For
Q1
:
V
DS
=10 V,
V
GS
= 4.5 V,
I
DS
= 1 A
R
GEN
= 6
For
Q2
:
V
DS
=–10 V,
V
GS
= –4.5 V, R
GEN
= 6
I
DS
= –1 A
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate–Source Charge
nC
Q
gd
Gate–Drain Charge
For
Q1
:
V
DS
=10 V,
V
GS
= 4.5 V,
For
Q2
:
V
DS
=–10 V,
V
GS
= –4.5 V,
I
DS
= 3.0 A
I
DS
= –2.2 A
nC
F
相關(guān)PDF資料
PDF描述
FDC6420C 20V N & P-Channel PowerTrench MOSFETs
FDC642 P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC642P P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6420C 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6420C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDC6420C_Q 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC642P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC642P_09 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m??
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