參數(shù)資料
型號(hào): FDC6020C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Complementary PowerTrench MOSFET
中文描述: 5.9 A, 20 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, FLMP, SUPERSOT-6
文件頁數(shù): 5/9頁
文件大?。?/td> 211K
代理商: FDC6020C
FDC6020C RevB (W)
Typical Characteristics : Q1
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -4.2A
V
DS
= -5V
-10V
-15V
0
100
200
300
400
500
600
700
800
900
1000
1100
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
1010ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 102
o
C/W
T
A
= 25
o
C
1ms
100
μ
s
10
μ
s
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 102°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
F
相關(guān)PDF資料
PDF描述
FDC602P P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應(yīng)管)
FDC602 P-Channel 2.5V Specified PowerTrench MOSFET
FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET
FDC604 P-Channel 1.8V Specified PowerTrench MOSFET
FDC604P P-Channel 1.8V Specified PowerTrench MOSFET
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