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參數(shù)資料
| 型號(hào)： | FDC6036P |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 5 A, 20 V, 0.044 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 163K |
| 代理商： | FDC6036P |
January 2004
2004 Fairchild Semiconductor Corporation
FDC6036P Rev C2 (W)
FDC6036P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the R
and thermal
properties of the device are optimized for battery power
management applications.
Applications
Battery management/Charger Application
Load switch
Features
–5 A, –20 V. R
DS(ON)
= 44 m
@ V
GS
= –4.5 V
R
DS(ON)
= 64 m
@ V
GS
= –2.5 V
R
DS(ON)
= 95 m
@ V
GS
= –1.8 V
Low gate charge, High Power and Current handling
capability
High performance trench technology for extremely
low R
DS(ON)
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
MOSFET Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Ratings
–20
±
8
Units
V
V
I
D
Drain Current – Continuous
(Note 1a)
–5
A
P
D
– Pulsed
–20
Power Dissipation for Dual Operation
1.8
W
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
1.8
0.9
T
J
, T
stg
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
.036
FDC6036P
(Note 1a)
68
1
°
C/W
7’’
8mm
3000 units
F
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