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參數(shù)資料
| 型號： | FDC604 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的1.8指定的PowerTrench |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 359K |
| 代理商： | FDC604 |
June 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDC604P Rev B (W)
FDC604P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
MOSFET
uses
Applications
Battery management
Load switch
Battery protection
Features
–5.5 A, –20 V.
R
DS(ON)
= 0.033
@ V
GS
= –4.5 V
R
DS(ON)
= 0.043
@ V
GS
= –2.5 V
R
DS(ON)
= 0.060
@ V
GS
= –1.8 V
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
P
D
Ratings
–20
±
8
-5.5
-20
1.6
0.8
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.604
FDC604P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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